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Organic semiconductor nickel phthalocyanine-based photocapacitive and photoresistive detector

Identifieur interne : 003B64 ( Main/Repository ); précédent : 003B63; suivant : 003B65

Organic semiconductor nickel phthalocyanine-based photocapacitive and photoresistive detector

Auteurs : RBID : Pascal:10-0373719

Descripteurs français

Pascal (Inist)
- Capteur mesure, Dépôt sous vide, Addition étain, Photocapacité, Eclairement, Photoconductivité, Photodétecteur, Semiconducteur organique, Phtalocyanine métallique, Complexe de nickel, Couche mince, Oxyde d'indium, Matériau revêtu, Verre, Thiophène dérivé polymère, Styrènesulfonate polymère, Mélange polymère, ITO, 0707D.
Wicri :
- concept : Verre.

English descriptors

KwdEn :
- Coated material, Glass, Illumination, Indium oxide, Measurement sensor, Metallophthalocyanine, Nickel complexes, Organic semiconductors, Photocapacitance, Photoconductivity, Photodetectors, Polymer blends, Styrenesulfonate polymer, Thin films, Thiophene derivative polymer, Tin additions, Vacuum deposition.

Abstract

In this study, the photosensitive organic semiconductor nickel phthalocyanine (NiPc) is investigated as a photocapacitive and photoresistive detector. NiPc thin film is grown by vacuum thermal evaporation on an indium tin oxide (ITO)-coated glass substrate. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is deposited as a top electrode by drop-casting to fabricate the ITO/NiPc/PEDOT:PSS light detector. It has been observed that under the unmodulated filament lamp illumination of up to 9720 lux the capacitance of the detectors increased up to 21, 18 and 4% at a frequency of measuring voltage of 120 Hz, 1 kHz and 10 kHz, respectively, under dark conditions. The change in resistance with the variation in the intensity of light is also investigated. The capacitance and resistance of the light detector decrease with an increase in the frequency. It is assumed that the photocapacitive and photoresistive response of the detector is associated with polarization occurring due to the transfer of photo-generated electrons and holes. The calculated results are in reasonable agreement with the experimental results.

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Pascal:10-0373719

Le document en format XML

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<author><name sortKey="Shah, Mutabar" uniqKey="Shah M">Mutabar Shah</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>GIK Institute of Engineering Sciences and Technology</s1>
<s2>Topi, 23640, NWFP</s2>
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<sZ>2 aut.</sZ>
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<country>Pakistan</country>
<wicri:noRegion>GIK Institute of Engineering Sciences and Technology</wicri:noRegion>
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<author><name sortKey="Karimov, Kh S" uniqKey="Karimov K">Kh S. Karimov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>GIK Institute of Engineering Sciences and Technology</s1>
<s2>Topi, 23640, NWFP</s2>
<s3>PAK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Pakistan</country>
<wicri:noRegion>GIK Institute of Engineering Sciences and Technology</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33</s1>
<s2>Dushanbe, 734025</s2>
<s3>TJK</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Tadjikistan</country>
<wicri:noRegion>Dushanbe, 734025</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sayyad, M H" uniqKey="Sayyad M">M. H. Sayyad</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>GIK Institute of Engineering Sciences and Technology</s1>
<s2>Topi, 23640, NWFP</s2>
<s3>PAK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Pakistan</country>
<wicri:noRegion>GIK Institute of Engineering Sciences and Technology</wicri:noRegion>
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<publicationStmt><idno type="inist">10-0373719</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0373719 INIST</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Coated material</term>
<term>Glass</term>
<term>Illumination</term>
<term>Indium oxide</term>
<term>Measurement sensor</term>
<term>Metallophthalocyanine</term>
<term>Nickel complexes</term>
<term>Organic semiconductors</term>
<term>Photocapacitance</term>
<term>Photoconductivity</term>
<term>Photodetectors</term>
<term>Polymer blends</term>
<term>Styrenesulfonate polymer</term>
<term>Thin films</term>
<term>Thiophene derivative polymer</term>
<term>Tin additions</term>
<term>Vacuum deposition</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Capteur mesure</term>
<term>Dépôt sous vide</term>
<term>Addition étain</term>
<term>Photocapacité</term>
<term>Eclairement</term>
<term>Photoconductivité</term>
<term>Photodétecteur</term>
<term>Semiconducteur organique</term>
<term>Phtalocyanine métallique</term>
<term>Complexe de nickel</term>
<term>Couche mince</term>
<term>Oxyde d'indium</term>
<term>Matériau revêtu</term>
<term>Verre</term>
<term>Thiophène dérivé polymère</term>
<term>Styrènesulfonate polymère</term>
<term>Mélange polymère</term>
<term>ITO</term>
<term>0707D</term>
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<front><div type="abstract" xml:lang="en">In this study, the photosensitive organic semiconductor nickel phthalocyanine (NiPc) is investigated as a photocapacitive and photoresistive detector. NiPc thin film is grown by vacuum thermal evaporation on an indium tin oxide (ITO)-coated glass substrate. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is deposited as a top electrode by drop-casting to fabricate the ITO/NiPc/PEDOT:PSS light detector. It has been observed that under the unmodulated filament lamp illumination of up to 9720 lux the capacitance of the detectors increased up to 21, 18 and 4% at a frequency of measuring voltage of 120 Hz, 1 kHz and 10 kHz, respectively, under dark conditions. The change in resistance with the variation in the intensity of light is also investigated. The capacitance and resistance of the light detector decrease with an increase in the frequency. It is assumed that the photocapacitive and photoresistive response of the detector is associated with polarization occurring due to the transfer of photo-generated electrons and holes. The calculated results are in reasonable agreement with the experimental results.</div>
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<fA11 i1="01" i2="1"><s1>SHAH (Mutabar)</s1>
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<fA11 i1="02" i2="1"><s1>KARIMOV (Kh S.)</s1>
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<fA14 i1="01"><s1>GIK Institute of Engineering Sciences and Technology</s1>
<s2>Topi, 23640, NWFP</s2>
<s3>PAK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33</s1>
<s2>Dushanbe, 734025</s2>
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<fC01 i1="01" l="ENG"><s0>In this study, the photosensitive organic semiconductor nickel phthalocyanine (NiPc) is investigated as a photocapacitive and photoresistive detector. NiPc thin film is grown by vacuum thermal evaporation on an indium tin oxide (ITO)-coated glass substrate. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is deposited as a top electrode by drop-casting to fabricate the ITO/NiPc/PEDOT:PSS light detector. It has been observed that under the unmodulated filament lamp illumination of up to 9720 lux the capacitance of the detectors increased up to 21, 18 and 4% at a frequency of measuring voltage of 120 Hz, 1 kHz and 10 kHz, respectively, under dark conditions. The change in resistance with the variation in the intensity of light is also investigated. The capacitance and resistance of the light detector decrease with an increase in the frequency. It is assumed that the photocapacitive and photoresistive response of the detector is associated with polarization occurring due to the transfer of photo-generated electrons and holes. The calculated results are in reasonable agreement with the experimental results.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Photoconductivity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Photodétecteur</s0>
<s5>07</s5>
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<s5>07</s5>
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<s5>22</s5>
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<s5>22</s5>
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<s5>23</s5>
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<s2>NK</s2>
<s5>24</s5>
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<s2>NK</s2>
<s5>24</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>25</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Thin films</s0>
<s5>25</s5>
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<fC03 i1="12" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>26</s5>
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<s5>26</s5>
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<s5>26</s5>
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<s5>27</s5>
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<s5>27</s5>
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<s5>28</s5>
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<s5>28</s5>
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<s2>NK</s2>
<s5>29</s5>
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<fC03 i1="15" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0>
<s2>NK</s2>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0>
<s2>NK</s2>
<s5>29</s5>
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<fC03 i1="16" i2="X" l="FRE"><s0>Styrènesulfonate polymère</s0>
<s2>NK</s2>
<s5>30</s5>
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<fC03 i1="16" i2="X" l="ENG"><s0>Styrenesulfonate polymer</s0>
<s2>NK</s2>
<s5>30</s5>
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<s2>NK</s2>
<s5>30</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>Mélange polymère</s0>
<s5>31</s5>
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<fC03 i1="17" i2="3" l="ENG"><s0>Polymer blends</s0>
<s5>31</s5>
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<s4>INC</s4>
<s5>82</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>0707D</s0>
<s4>INC</s4>
<s5>83</s5>
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<fN21><s1>242</s1>
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Organic semiconductor nickel phthalocyanine-based photocapacitive and photoresistive detector

Organic semiconductor nickel phthalocyanine-based photocapacitive and photoresistive detector

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri